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| CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 1/7 BTC1510J3 Description BVCEO IC RCESAT 150V 10A 220m The BTC1510J3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: * High BVCEO * Low VCE(SAT) * High current gain * Monolithic construction with built-in base-emitter shunt resistors * TO-252 surface mount package * RoHS compliant package Equivalent Circuit BTC1510J3 C B R18k R2120 Outline TO-252 BBase CCollector EEmitter E BCE BTC1510J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=100ms Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 2/7 Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25) Pd(TC=25) Tj Tstg Limits 150 150 5 10 15 1.75 20 150 -55~+150 Unit V V V *1 A W C C Characteristics (Ta=25C) Symbol BVCBO BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) *VBE(on) 1 *VBE(on) 2 *VFEC *hFE1 *hFE2 Min. 150 150 2 100 Typ. Max. 200 200 2 1.5 3 2 2 2.8 4.5 3 20 Unit V V A A mA V V V V V V V K Test Conditions IC=100A, IE=0 IC=1mA, IB=0 VCE=150V, IE=0 VCB=150V, IE=0 VEB=5V, IC=0 IC=5A, IB=10mA IC=10A, IB=100mA IC=5A, IB=2.5mA IC=5A, IB=5mA VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCE=3V, IC=5A VCE=3V, IC=10A *Pulse Test : Pulse Width 380s, Duty Cycle2% Ordering Information Device BTC1510J3 Package TO-252 (RoHS compliant) Shipping 2500 pcs / Tape & Reel Marking C1510 BTC1510J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 100000 HFE@VCE=3V Current Gain--- HFE 10000 125 1000 75 100 25 10 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) 10000 VCE(SAT)@IC=250IB Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 3/7 Saturation Voltage vs Collector Current 25 1000 75 100 100 1000 125 10000 Collector Current---IC(mA) Saturation Voltage vs Collcetor Current 10000 VCE(SAT)@IC=2000IB Saturation Voltage---(mV) 75 25 1000 Saturation Voltage---(mV) 10000 Saturation Voltage vs Colltctor Current VCE(SAT)@IC=500IB 25 1000 75 125 100 1000 Collector Current---IC(mA) 125 100 10000 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collcetor Current 10000 Power Derating Curve 2 Power Dissipation---PD(W) VBE(ON)@VCE=3V On Voltage---(mV) 25 75 1.75 1.5 1.25 1 0.75 0.5 0.25 1000 125 100 100 1000 Collector Current---IC(mA) 10000 0 0 50 100 150 200 Ambient Temperature---TA() BTC1510J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Power Derating Curve 25 Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 4/7 Power Dissipation---PD(W) 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC() BTC1510J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 5/7 Carrier Tape Dimension BTC1510J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max. Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max. BTC1510J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C652J3 Issued Date : 2003.05.16 Revised Date :2009.02.04 Page No. : 7/7 Marking: B L F G D C1510 3 H E K 2 I 1 J Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: KFC; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC1510J3 CYStek Product Specification |
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